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1203295731
DE-101
2020-01-23T21:30:40
2020-01-22
1203295731
DE-101
1140
9999
text
1543-186X
537.6226
DE-101
23kdnb
TA1750-1750.22
lcc
1001 $aSingh, Shailendra$eVerfasser$4aut
Singh, Shailendra
Verfasser
Design and Analysis of a Heterojunction Vertical t-Shaped Tunnel Field Effect Transistor
Text
(lcsh)Solid state physics
(lcsh)Electronics
(lcsh)Microelectronics
(lcsh)Optical materials
(lcsh)Electronic materials
(lcsh)Materials science
Optical and Electronic Materials
Characterization and Evaluation of Materials
Electronics and Microelectronics, Instrumentation
Solid State Physics
7001 $aRaj, Balwinder$eVerfasser$4aut
Raj, Balwinder
Verfasser
7102 $aSpringerLink (Online service)$eSonstige$4oth
SpringerLink (Online service)
Sonstige
Design and Analysis of a Heterojunction Vertical t-Shaped Tunnel Field Effect Transistor
Design and Analysis of a Heterojunction Vertical t-Shaped Tunnel Field Effect Transistor
volume:48
number:10
day:9
month:7
year:2019
pages:6253-6260
date:10.2019
Journal of electronic materials
Enthalten in
1543-186X
Journal of electronic materials
Warrendale, Pa : TMS, 1972-
48, Heft 10 (9.7.2019), 6253-6260, 10.2019
Online-Ressource
2032868-0
DE-600
021082928
DE-101
2019
10.1007/s11664-019-07412-2
urn:nbn:de:101:1-2020012223125538148559
DNB1203295731
1196518791
by Shailendra Singh, Balwinder Raj
Design and Analysis of a Heterojunction Vertical t-Shaped Tunnel Field Effect Transistor
Online-Ressource
online resource.
Computermedien
Online-Ressource
Archivierung/Langzeitarchivierung gewährleistet
pdager
DE-101
https://doi.org/10.1007/s11664-019-07412-2
https://nbn-resolving.org/urn:nbn:de:101:1-2020012223125538148559
https://d-nb.info/1203295731/34
https://doi.org/10.1007/s11664-019-07412-2