@prefix schema: <http://schema.org/> .
@prefix gndo: <https://d-nb.info/standards/elementset/gnd#> .
@prefix lib: <http://purl.org/library/> .
@prefix owl: <http://www.w3.org/2002/07/owl#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .
@prefix skos: <http://www.w3.org/2004/02/skos/core#> .
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#> .
@prefix editeur: <https://ns.editeur.org/thema/> .
@prefix geo: <http://www.opengis.net/ont/geosparql#> .
@prefix umbel: <http://umbel.org/umbel#> .
@prefix naf: <https://id.loc.gov/authorities/names/> .
@prefix sf: <http://www.opengis.net/ont/sf#> .
@prefix rdau: <http://rdaregistry.info/Elements/u/> .
@prefix bflc: <http://id.loc.gov/ontologies/bflc/> .
@prefix thesoz: <http://lod.gesis.org/thesoz/> .
@prefix dcterms: <http://purl.org/dc/terms/> .
@prefix isbd: <http://iflastandards.info/ns/isbd/elements/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix mesh: <http://id.nlm.nih.gov/mesh/vocab#> .
@prefix ram: <https://data.bnf.fr/ark:/12148/> .
@prefix mo: <http://purl.org/ontology/mo/> .
@prefix marcRole: <http://id.loc.gov/vocabulary/relators/> .
@prefix agrelon: <https://d-nb.info/standards/elementset/agrelon#> .
@prefix dcmitype: <http://purl.org/dc/dcmitype/> .
@prefix nsogg: <https://purl.org/bncf/tid/> .
@prefix dnbt: <https://d-nb.info/standards/elementset/dnb#> .
@prefix dbp: <http://dbpedia.org/property/> .
@prefix embne: <https://datos.bne.es/resource/> .
@prefix rdf: <http://www.w3.org/1999/02/22-rdf-syntax-ns#> .
@prefix dnb_intern: <http://dnb.de/> .
@prefix madsrdf: <http://www.loc.gov/mads/rdf/v1#> .
@prefix v: <http://www.w3.org/2006/vcard/ns#> .
@prefix cidoc: <http://www.cidoc-crm.org/cidoc-crm/> .
@prefix dcatde: <http://dcat-ap.de/def/dcatde/> .
@prefix ebu: <http://www.ebu.ch/metadata/ontologies/ebucore/ebucore#> .
@prefix wdrs: <http://www.w3.org/2007/05/powder-s#> .
@prefix bibo: <http://purl.org/ontology/bibo/> .
@prefix gbv: <http://purl.org/ontology/gbv/> .
@prefix agrovoc: <https://aims.fao.org/aos/agrovoc/> .
@prefix lcsh: <https://id.loc.gov/authorities/subjects/> .
@prefix dc: <http://purl.org/dc/elements/1.1/> .

<https://d-nb.info/132862594X> a bibo:Issue;
  dcterms:medium <http://rdaregistry.info/termList/RDACarrierType/1018>;
  rdau:P60049 <http://rdaregistry.info/termList/RDAContentType/1020>;
  rdau:P60050 <http://rdaregistry.info/termList/RDAMediaType/1003>;
  rdau:P60048 <http://rdaregistry.info/termList/RDACarrierType/1018>;
  dc:identifier "(DE-101)132862594X";
  umbel:isLike <https://doi.org/10.1515/aot-2017-0021>, <https://nbn-resolving.org/urn:nbn:de:101:1-2405071630076.176394129692>;
  dc:identifier "(OCoLC)1562759157";
  dcterms:language <http://id.loc.gov/vocabulary/iso639-2/eng>;
  a bibo:Article;
  dc:title "Photoresists in extreme ultraviolet lithography (EUVL)";
  dcterms:creator _:node1k0rmm5k0x33705933 .

_:node1k0rmm5k0x33705933 gndo:preferredName "De Simone, Danilo" .

<https://d-nb.info/132862594X> marcRole:aut _:node1k0rmm5k0x33705934 .

_:node1k0rmm5k0x33705934 gndo:preferredName "De Simone, Danilo" .

<https://d-nb.info/132862594X> marcRole:aut _:node1k0rmm5k0x33705935 .

_:node1k0rmm5k0x33705935 gndo:preferredName "Vesters, Yannick" .

<https://d-nb.info/132862594X> marcRole:aut _:node1k0rmm5k0x33705936 .

_:node1k0rmm5k0x33705936 gndo:preferredName "Vandenberghe, Geert" .

<https://d-nb.info/132862594X> bibo:pageStart "163";
  bibo:pageEnd "172";
  dcterms:extent "10 S.";
  dcterms:isPartOf <https://ld.zdb-services.de/resource/2663362-0>;
  dcterms:description "Abstract: The evolutionary advances in photosensitive material technology, together with the shortening of the exposure wavelength in the photolithography process, have enabled and driven the transistor scaling dictated by Moore’s law for the last 50 years. Today, the shortening wavelength trend continues to improve the chips’ performance over time by feature size miniaturization. The next-generation lithography technology for high-volume manufacturing (HVM) is extreme ultraviolet lithography (EUVL), using a light source with a wavelength of 13.5 nm. Here, we provide a brief introduction to EUVL and patterning requirements for sub-0-nm feature sizes from a photomaterial standpoint, discussing traditional and novel photoresists. Emphasis will be put on the novel class of metal-containing resists (MCRs) as well as their challenges from a manufacturing prospective."@de;
  wdrs:describedby <https://d-nb.info/132862594X/about> .

<https://d-nb.info/132862594X/about> dcterms:license <http://creativecommons.org/publicdomain/zero/1.0/>;
  dcterms:modified "2024-05-07T21:43:49.000"^^xsd:dateTime .

<https://d-nb.info/132862594X> dcterms:issued "2017";
  bibo:issue "6.2017, 3-4";
  owl:sameAs <http://hub.culturegraph.org/resource/DNB-132862594X> .